HiSilicon Kirin 990 5G TSMC 7 nm FinFET (N7+ EUV) Process Digital Floorplan Analysis

Product Code
Release Date
Product Item Code
Device Manufacturer
HiSilicon Technologies Co. Ltd
Device Type
Applications Processor
Report Code
HiSilicon Kirin 990 5G TSMC 7 nm FinFET (N7+ EUV) Process Digital Floorplan Analysis
This report presents a Digital Floorplan Analysis of the HI3690 V200 die found inside the HiSiliconKirin 990 5G (Hi3690) application processor package. The Hi3690 processor was extracted from the Huawei Mate 30 Pro 5G smartphone (model LIO-AN00).

This report contains the following detailed information:
  • Selected teardown photographs, package photographs, package X-rays, die markings, and die photographs
  • Scanning electron microscopy (SEM) plan-view micrographs showing the layout of the die at the levels, including fin/shallow trench isolation (STI), gate, contacts, and minimum pitch metals
  • Measurements of horizontal dimensions of some of the major layout features, particularly the pitch and track height of standard cells
  • Plan-view optical micrograph of the die delayered to the metal gate level
  • Identification of major functional blocks on a gate level die photograph
  • Table of functional block sizes and percentage die utilization
  • High-resolution top metal and gate level die photographs delivered in the CircuitVision Software
  • Cost of die based on the process analysis
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