Product Item Code
Memory - NAND & DRAM
Memory - Process
Micron MT44K32M36RCT-125 3rd Gen RLDRAM Advanced Memory Essentials
• 3rd generation reduced latency DRAM (RLDRAM 3) product from Micron Technology. • It has a memory density of 1.125 Gb and contain two F57R dies in a fine pitch ball grid array (FBGA) MCP. • The F57R die has a capacity of 576 Mb and a bit density of 5.04 Mb/mm2
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